Radiation effects in the readout chip for the ATLAS semiconductor tracker

被引：8

作者：

Mandic, I ^{[1
]}

机构：

[1] Jozef Stefan Inst, Ljubljana, Slovenia

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 06期

关键词：

ABCD3TA readout chip; LHC experiment; silicon strip detector; radiation effects;

D O I：

10.1109/TNS.2002.805412

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ABCD3TA readout chip for silicon strip detectors of the ATLAS SemiConductor Tracker (SCT) is described. It is the final design of the single chip implementation of the binary readout architecture. The chip is manufactured in the DMILL radiation-hardened BiCMOS process. Summary of results of irradiations of ABCD3TA chips with up to 100 kGy and 2 x 10(14)n/cm(2) (1-MeV neutron NIEL equivalent) done with various sources is given in this paper. Measurements of single event effects with high-energy proton and pion beams are also reported. The tests proved that the chips are sufficiently radiation hard for application in the ATLAS SCT.

引用

页码：2888 / 2894

页数：7

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