An STM study of Cu on Si(001) in the c(8 x 8) structure

被引：10

作者：

Liu, BZ

Katkov, MV

Nogami, J ^{[1
]}

机构：

[1] Michigan State Univ, Dept Mat Sci & Mech, E Lansing, MI 48824 USA

[2] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

来源：

SURFACE SCIENCE | 2000年 / 453卷 / 1-3期

关键词：

copper; scanning tunneling microscopy; silicon; surface structure; morphology; roughness; and topography;

D O I：

10.1016/S0039-6028(00)00329-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the growth of Cu on the Si(001) surface over a range of growth temperatures and metal coverages. The only ordered phase seen by low energy electron diffraction (LEED), other than the 2 x 1 substrate pattern, was a c(8 x 8) phase which occurs at coverages as low as 0.05 monolayers. Scanning tunneling microscopy (STM) measurements show that the c(8 x 8) structure consists of an array of bright features, two per unit cell. We propose one possible atomic structure on the basis of the STM images. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：137 / 142

页数：6

共 9 条

[1] Anisotropic inter-action of Ag-induced missing dimer vacancies on Si(001) surfaces [J].