Polishing Damages to Electrical Properties of BLT Thin Film Capacitors Fabricated by Damascene Process of Chemical Mechanical Polishing

被引：0
|
作者：
Kim, Nam-Hoon [2 ]
Jung, Pan-Gum [1 ]
Ko, Pil-Ju [1 ]
Lee, Woo-Sun [1 ]
机构：
[1] Chosun Univ, Dept Elect Engn, Kwangju 501759, South Korea
[2] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea
来源：
2008 17TH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
BLT thin film capacitor was fabricated by the novel method of chemical mechanical polishing (CMP) process. The electrical characteristics including P-V and I-V of BLT capacitor were damaged by the polishing pressure which is one of the main factors to improve the CMP performance for BLT thin film; therefore, the lower polishing pressure must be selected for the good electrical characteristics although the removal rate was lower.
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收藏
页码：208 / +
页数：2
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