Theoretical Insights into Two-Dimensional IV-V Compounds: Photocatalysts for the Overall Water Splitting and Nanoelectronic Applications

被引:37
作者
Gao, Xu [1 ]
Shen, Yanqing [1 ]
Ma, Yanyan [1 ]
Wu, Shengyao [1 ]
Zhou, Zhongxiang [1 ]
机构
[1] Harbin Inst Technol, Dept Phys, Harbin 150001, Heilongjiang, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
ELECTRONIC-PROPERTIES; HYDROGEN-PRODUCTION; PROMISING PHOTOCATALYSTS; METAL DICHALCOGENIDES; OPTICAL-PROPERTIES; ENERGY-CONVERSION; JANUS MOSSE; HETEROSTRUCTURE; MONOLAYERS; NANOSHEETS;
D O I
10.1021/acs.inorgchem.9b01255
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Two-dimensional (2D) materials have attracted enormous attention in many fields because of their appealing performances. In this contribution, we perform first-principles calculations on the photocatalytic properties of IV-V compounds, along with the design of a functional Schottky device based on a graphene/SiAs van der Waals heterostructure (vdWH). Our results indicate that eight IV-V compound materials are all excellent photocatalysts for water-splitting reactions with high efficiency of visible light, with the conduction band minimum (CBM) and valence band maximum (VBM) both involving the corresponding band-gap region. It is examined whether a weak acid environment is beneficial for the hydrogen production process. Monolayer GeAs is characterized by an excellent absorption coefficient of up to 10(5)-2 x 10(5) cm(-1) in the visible region. The other nanostructures also have a considerable optical absorption as high as approximately half of 10(5) cm(-1). These illustrate fascinating application prospectives for IV-V compounds in photocatalysis for water splitting under the irradiation of visible light, predicting tremendous significance in the fields of energy conversion and hydrogen production. The graphene/SiAs vdWH nanocomposite at the equilibrium state is featured for an n-type Schottky contact. External strain and electric-field applications are employed to practically present the transition for interface contact between the n- and p-type Schottky contacts or between the Schottky and ohmic contacts, which suggests appealing applications for the graphene/SiAs vdWH as a competitive candidate for functional Schottky devices and nanoelectronic materials.
引用
收藏
页码:12053 / 12068
页数:16
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