Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) 28Si ions

Single crystal GaAs substrates implanted with 100 MeV Si-28 ions have been investigated by optical transmission over photon energy range 0.7-1.4 eV. The alpha x values increase with increasing dose until samples are nearly opaque (alpha x > 1) over the entire measurement photon energy range at a dose of 5 x 10(14) ions/cm(2) Damage distribution is probed by etching the sample and shows presence of an amorphous layer at a depth of 24-25 mu m. Transmission recovers substantially after etching beyond 25.6 mu m. Annealing experiments show that a significant damage recovery occurs over the temperature range 200-500 degrees C with an activation energy 0.2 eV. However, some residual damage remains even after annealing at 700 degrees C. (C) 2000 Elsevier Science B.V. All rights reserved.