Epitaxial indium tin oxide films deposited on yttrium stabilized zirconia substrate by DC magnetron sputtering

被引：10
作者：
Huang, Gaige [1 ]
Yu, Qiaonan [1 ,2 ]
Kou, Shiwen [1 ]
Zhai, Pengwei [1 ]
Li, Guoqiang [1 ,3 ]
机构：
[1] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
[2] Nanyang Inst Technol, Nanyang 473004, Peoples R China
[3] Henan Univ, Sch Phys & Elect, Natl Demonstrat Ctr Expt Phys & Elect Educ, Kaifeng 475004, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2021年 / 601卷
关键词：
Indium tin oxide; Magnetron sputtering; Epitaxy; Electrical properties; THIN-FILMS; ELECTRICAL-PROPERTIES; ITO; EFFICIENCY; ELECTRODE; ORIENTATION; QUALITY; GROWTH;
D O I：
10.1016/j.physb.2020.412667
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Epitaxial indium tin oxide (ITO) films were successfully prepared on Yttrium Stabilized Zirconia (YSZ) substrates by direct current magnetron sputtering. The epitaxial relationships between ITO films and YSZ substrates were confirmed as ITO (100) parallel to YSZ (001) by XRD theta-2 theta scans and phi-scans. The influence of deposition conditions including of substrate temperature, film thickness and sputtering power were studied systematically. The preparation conditions of ITO films were optimized according to flatness and electrical performance. Moreover, the electrical properties were compared between ITO films deposited on YSZ (100) substrates and quartz substrates, and the former samples have better conductivities.
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页数：7
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