Microreflectance difference spectrometer based on a charge coupled device camera: surface distribution of polishing-related linear defect density in GaAs (001)

被引：12

作者：

Lastras-Martinez, L. F. ^{[1
]}

Castro-Garcia, R. ^{[1
]}

Balderas-Navarro, R. E. ^{[1
]}

Lastras-Martinez, A. ^{[1
]}

机构：

[1] Univ Autonoma San Luis Potosi, Inst Invest Comunicac Opt, San Luis Potosi 78000, Mexico

来源：

APPLIED OPTICS | 2009年 / 48卷 / 30期

基金：

芬兰科学院;

关键词：

OPTICAL ANISOTROPY; STRAIN FIELDS; MICRO-RAMAN; SPECTROSCOPY; SEMICONDUCTORS; SPECTRA; DISLOCATIONS; GAAS(100); GAP;

D O I：

10.1364/AO.48.005713

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We describe a microreflectance difference (mu RD) spectrometer based on a charge coupled device (CCD), in contrast to most common RD spectrometers that are based on a photomultiplier or a photodiode as a light detector. The advantage of our instrument over others is the possibility to isolate the RD spectrum of specific areas of the sample; thus topographic maps of the surface can be obtained. In our setup we have a maximum spatial resolution of approximately 2.50 mu mx2.50 mu m and a spectral range from 1.2 to 5.5 eV. To illustrate the performance of the spectrometer, we have measured strains in mechanically polished GaAs (001) single crystals. (C) 2009 Optical Society of America

引用

页码：5713 / 5717

页数：5

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