Stress measurement at the interface between a Si substrate and diamond-like carbon/Cr/W films by the electronic backscatter diffraction method

被引：1

作者：

Zhou, Liqi ^{[1
,2
]}

Xu, Guofu ^{[1
]}

Li, Xu ^{[2
]}

Wang, Xinwei ^{[3
]}

Ren, Lingling ^{[2
]}

Wang, Aiying ^{[4
]}

Tao, Xingfu ^{[2
]}

机构：

[1] Cent S Univ, Sch Mat Sci & Engn, Changsha 410083, Hunan, Peoples R China

[2] Natl Inst Metrol, Div Nano Metrol & Mat Measurement, Beijing 100013, Peoples R China

[3] Taiyuan Univ Technol, Res Inst Surface Engn, Taiyuan 030000, Peoples R China

[4] Ningbo Inst Mat Technol & Engn, Zhejiang Key Lab Marine Mat & Protect Technol, Key Lab Marine Mat & Related Technol, Ningbo 315201, Zhejiang, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 02期

基金：

美国国家科学基金会;

关键词：

X-RAY-DIFFRACTION; THIN-FILMS; RESIDUAL-STRESS; STRAIN; SILICON; GROWTH; COALESCENCE; DEPOSITION; SURFACE; EBSD;

D O I：

10.7567/APEX.9.025504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stress distribution characteristics at the interface between diamond-like carbon (DLC)/Cr/W films and a Si substrate were studied by an electronic backscatter diffraction (EBSD) system and transmission electron microscopy. Positive and negative stresses were distributed within the largest width of the Si/DLC interface, whereas the stress bands of homogeneous stress layers were observed at the interface between the Si substrate and the Cr layer. The stress bands of the Si/W interface were found to have the smallest width. The distinct characteristics of stress distribution at these interfaces are produced by the difference in the mass, energy, and diameter of the deposition ions/atoms as well as the different mechanisms of film growth. (C) 2016 The Japan Society of Applied Physics.

引用

页数：4

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