Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces

被引：25

作者：

Wu, J. H. ^{[1
]}

Ye, W. ^{[1
]}

Cardozo, B. L. ^{[1
]}

Saltzman, D. ^{[1
]}

Sun, K. ^{[1
]}

Sun, H. ^{[1
]}

Mansfield, J. F. ^{[1
]}

Goldman, R. S. ^{[1
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 15期

关键词：

SEMICONDUCTOR SURFACES; PARTICLES; GALLIUM;

D O I：

10.1063/1.3229889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence). (C) 2009 American Institute of Physics. [doi:10.1063/1.3229889]

引用

页数：3

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