Enhanced superconductivity accompanying a Lifshitz transition in electron-doped FeSe monolayer

被引：90

作者：

Shi, X. ^{[1
,2
]}

Han, Z. -Q. ^{[1
,2
,3
]}

Peng, X. -L. ^{[1
,2
]}

Richard, P. ^{[1
,2
,4
,5
]}

Qian, T. ^{[1
,2
,4
]}

Wu, X. -X. ^{[1
,2
]}

Qiu, M. -W. ^{[1
,2
]}

Wang, S. C. ^{[2
,3
]}

Hu, J. P. ^{[1
,2
,4
,5
]}

Sun, Y. -J. ^{[1
,2
]}

Ding, H. ^{[1
,2
,4
,5
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Dept Phys, Beijing 100872, Peoples R China

[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China

[5] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China

来源：

NATURE COMMUNICATIONS | 2017年 / 8卷

基金：

中国国家自然科学基金;

关键词：

HIGH-TEMPERATURE SUPERCONDUCTIVITY; PHASE-DIAGRAM; 65; K; ORIGIN;

D O I：

10.1038/ncomms14988

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The origin of enhanced superconductivity over 50 K in the recently discovered FeSe monolayer films grown on SrTiO3 (STO), as compared to 8 K in bulk FeSe, is intensely debated. As with the ferrochalcogenides A(x)Fe(2-y)Se(2) and potassium-doped FeSe, which also have a relatively high-superconducting critical temperature (T-c), the Fermi surface (FS) of the FeSe/STO monolayer films is free of hole-like FS, suggesting that a Lifshitz transition by which these hole FSs vanish may help increasing Tc. However, the fundamental reasons explaining this increase of Tc remain unclear. Here we report a 15 K jump of Tc accompanying a second Lifshitz transition characterized by the emergence of an electron pocket at the Brillouin zone centre, which is triggered by high-electron doping following in situ deposition of potassium on FeSe/STO monolayer films. Our results suggest that the pairing interactions are orbital dependent in generating enhanced superconductivity in FeSe.

引用

页数：6

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