The low-temperature preparation for low-selenium Sb2SxSey thin film solar cells with efficiency of > 5%

The low pyrolysis-crystallization temperature of 200 degrees C was firstly reported to prepare crystalline low-selenium Sb2SxSey (x:y = 3.0:0.2) thin films using the mixture solution of Sb2O3, Se, CS2, and n-butylamine in DMF as a precursor solution. The corresponding thin film solar cells with the architecture of FTO/compact TiO2/Sb2SxSey/spiro-OMeTAD/Au achieved a power conversion efficiency of 5.54%, along with an open-circuit voltage of 0.56 V, a short-circuit photocurrent density of 16.16 mA cm(-2) and a fill factor of 0.61. The low-temperature preparation process of crystalline Sb2SxSey thin films can provide a feasible approach for assembling the flexible Sb2SxSey thin film solar cells.