10kV, 87mΩcm2 normally-off 4H-SiC vertical junction field-effect transistors

被引：4
|
作者：
Li, Yuzhu
Alexandrov, Petre
Zhang, Jianhui
Li, Larry X.
Zhao, Jian H.
机构：
[1] Rutgers State Univ, SiCLAB, ECE Dept, Piscataway, NJ 08854 USA
[2] United Silicon Carbide, New Brunswick, NJ 08901 USA
来源：
Silicon Carbide and Related Materials 2005, Pts 1 and 2 | 2006年 / 527-529卷
关键词：
normally-off; JFET; high voltage; low on-resistance;
D O I：
10.4028/www.scientific.net/MSF.527-529.1187
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SiC MET, compared with SiC MOSFET, is attractive for high power, high temperature applications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TI-VJFET) does not require epi-regrowth and is capable of high current density. In this work we demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistors (TI-VJFET), based on 120 mu m, 4.9 x 10(14) cm(-3) and 100 mu m, 6 x 10(14) cm(-3) drift layers. The corresponding devices showed blocking voltage (V-B) of 11.1kV and specific on-resistance (RSP-ON) of 124m Omega cm(2), and V-B of 10kV and RSP-ON of 87m Omega cm(2). A record-high value for V-B(2)/RSP-ON of 1149MW/cm(2) was achieved for normally-off SiC FETs.
引用
收藏
页码：1187 / 1190
页数：4
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