Anisotropic electron spin relaxation in bulk GaN

被引：42

作者：

Buss, J. H. ^{[1
]}

Rudolph, J. ^{[1
]}

Natali, F. ^{[2
]}

Semond, F.

Haegele, D. ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Arbeitsgrp Spektroskopie Kondensterten Mat, D-44780 Bochum, Germany

[2] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 19期

关键词：

Anisotropy - Electrons - Spin dynamics - Zinc sulfide - Magnetic moments - III-V semiconductors - Wide band gap semiconductors - Electrospinning;

D O I：

10.1063/1.3261755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron spin dynamics in n-type c-oriented wurtzite GaN epilayers is studied by time-resolved Kerr-rotation measurements at T=80 K. The electron spin lifetime shows a sudden increase if an external magnetic field is applied in the sample plane. This enhancement is explained by anisotropic Dyakonov-Perel spin relaxation in bulk GaN as a direct consequence of the anisotropy of spin-orbit coupling in semiconductors with wurtzite structure. (C) 2009 American Institute of Physics. [doi:10.1063/.1.3261755]

引用

页数：3

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