Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

被引：67

作者：

Djie, H. S. ^{[1
]}

Ooi, B. S.

Fang, X. -M.

Wu, Y.

Fastenau, J. M.

Liu, W. K.

Hopkinson, M.

机构：

[1] Lehigh Univ, Ctr Opt Techol, Bethlehem, PA 18015 USA

[2] Lehigh Univ, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA

[3] IQE Inc, Bethlehem, PA 18015 USA

来源：

OPTICS LETTERS | 2007年 / 32卷 / 01期

关键词：

D O I：

10.1364/OL.32.000044

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of similar to 40 nm at an similar to 1160 mn center wavelength at room temperature. The broadband signature results from the super-position of quantized lasing states from highly inhomogeneous dots. (c) 2006 Optical Society of America

引用

页码：44 / 46

页数：3

共 7 条

[1] Defect annealing of InAs-InAlGaAs quantum-dash-in-asymmetric-well laser [J].