Conductance of the single-electron transistor in the strong tunneling regime

被引：0
作者：
Göppert, G
Hüpper, B
Grabert, H
机构：
[1] Univ Freiburg, Fak Phys, D-79104 Freiburg, Germany
[2] Weizmann Inst Sci, Dept Chem Phys, IL-76100 Rehovot, Israel
来源：
PHYSICA B-CONDENSED MATTER | 2000年 / 284卷
关键词：
Coulomb blockade; strong tunneling; transistor;
D O I：
10.1016/S0921-4526(99)02980-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The conductance of the single-electron transistor is examined in the strong tunneling regime, where the tunneling conductance of the junctions may exceed the conductance quantum. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from the Kubo formula. Higher-order perturbative results for weak tunneling and analytical results for strong tunneling based on the semiclassical approximation are bridged by quantum Monte Carlo simulations. The findings are compared with recent experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.
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收藏
页码：1792 / 1793
页数：2
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