Improved field-induced strains and fatigue endurance of PLZT antiferroelectric thick films by orientation control

被引：20

作者：

Hao, Xihong ^{[1
,2
]}

Zhai, Jiwei ^{[1
]}

Yang, Jichun ^{[2
]}

Ren, Huiping ^{[2
]}

Song, Xiwen ^{[2
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

[2] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2009年 / 3卷 / 7-8期

基金：

中国国家自然科学基金;

关键词：

ENERGY-STORAGE; TEXTURE; PHASES;

D O I：

10.1002/pssr.200903174

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(Pb0.97L0.02)(Zr0.95Ti0.95)O-3 (PLZT) antiferroelectric thick films with (100) and (110) orientation were fabricated on platinum and LaNiO3-buffered silicon substrates through a modified sot-gel process. It was demonstrated that the PLZT thick films with (110) preferred orientation had an enhanced electric-field-induced strain, by 77% as compared to the films with (100) orientation. Also, the antiferroetectrie-ferroelectric switching field for the PLZT thick films with (110) orientation was 200 kV/cm, which was much lower than that (256 kV/cm) of the (100) oriented films. Moreover, the fatigue behavior of the PLZT thick films on LaNiO3 electrodes was much better than that of the films on platinum electrodes. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：248 / 250

页数：3

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