Evidence for the bias-driven migration of oxygen vacancies in amorphous non-stoichiometric gallium oxide

被引：36
作者：
Guo, D. Y. [1 ]
Qian, Y. P. [1 ]
Su, Y. L. [1 ]
Shi, H. Z. [1 ]
Li, P. G. [1 ,2 ]
Wu, J. T. [1 ]
Wang, S. L. [1 ]
Cui, C. [1 ]
Tang, W. H. [2 ]
机构：
[1] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Zhejiang, Peoples R China
[2] Beijing Univ Posts & Telecommun, Sch Sci, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
来源：
AIP ADVANCES | 2017年 / 7卷 / 06期
基金：
中国国家自然科学基金;
关键词：
BETA-GA2O3; SINGLE-CRYSTALS; THIN-FILMS; FABRICATION;
D O I：
10.1063/1.4990566
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The conductivity of gallium oxide thin films is strongly dependent on the growth temperature when they deposited by pulsed laser deposition under vacuum environment, exhibiting an insulative-to-metallic transition with the decrease of the temperature. The high conductive gallium oxide films deposited at lowtemperature are amorphous, nonstoichiometric, and rich in oxygen vacancy. Large changes in electrical resistance are observed in these non-stoichiometric thin films. The wide variety of hysteretic shapes in the I-V curves depend on the voltage-sweep rate, evidencing that the time-dependent redistribution of oxygen vacancy driven by bias is the controlling parameter for the resistance of gallium oxide. (C) 2017 Author(s).
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页数：6
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