Codoping for the fabrication of p-type ZnO

被引:160
作者
Yamamoto, T [1 ]
机构
[1] Kochi Univ Technol, Dept Elect & Photon Syst Engn, Kochi 7828502, Japan
关键词
zinc oxide; impurities;
D O I
10.1016/S0040-6090(02)00655-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We propose a codoping method using acceptors and donors simultaneously in order to solve the crucial doping problem of wide-band-gap semiconductor, ZnO. It is very difficult to obtain low-resistivity p-type ZnO while it is very easy to fabricate n-type highly doped ZnO with good conductance. The deliberate codoping of donors with acceptors is essential for the enhancement of acceptor incorporation with a decrease in the lattice energy and a decrease in the binding energy of the acceptor impurity in p-type highly doped ZnO. The donor is not the p-type killer but a good by-player that activates acceptors, i.e. the reactive codopant. The confirmation of the applicability of its codoping method using N acceptor and Ga species as reactive codopant to produce low-resistivity p-type ZnO was achieved experimentally. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:100 / 106
页数:7
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