Electronic structure and transport properties of coupled CdS/ZnSe quantum dots

被引:3
作者
Liebing, Simon [1 ,2 ]
Hahn, Torsten [2 ]
Kortus, Jens [2 ]
Das, Bidisa [3 ,4 ]
Chakraborty, Arup [5 ,6 ,7 ]
Dasgupta, Indra [7 ]
机构
[1] Joint Inst Nucl Res Dubna, Bogoliubov Lab Theoret Phys, Dubna 141980, Russia
[2] TU Bergakad Freiberg, Inst Theoret Phys, Leipziger Str 23, D-09596 Freiberg, Germany
[3] Indian Assoc Cultivat Sci, Tech Res Ctr, Kolkata 700032, India
[4] Indian Assoc Cultivat Sci, Sch Appl & Interdisciplinary Sci, Kolkata 700032, India
[5] Bar Ilan Univ, Dept Chem, IL-52900 Ramat Gan, Israel
[6] Bar Ilan Univ, Inst Nanotechnol & Adv Mat, IL-52900 Ramat Gan, Israel
[7] Indian Assoc Cultivat Sci, Sch Phys Sci, Kolkata 700032, India
关键词
nanocluster; electronic structure of nanoscale materials; modeling and simulation; density functional theory; nonequilibrium Greens functions; quantum dot; BAND OFFSETS; DENSITY; ENERGY; CDS; APPROXIMATION; FORMULA;
D O I
10.1088/1361-648X/abd5f6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Electronic structure and transport characteristics of coupled CdS and ZnSe quantum dots are studied using density functional theory and non equilibrium Greens function method respectively. Our investigations show that in these novel coupled dots, the Frontier occupied and unoccupied molecular orbitals are spatially located in two different parts, thereby indicating the possibility of asymmetry in electronic transport. We have calculated electronic transport through the coupled quantum dot by varying the coupling strength between the individual quantum dots in the limits of weak and strong coupling. Calculations reveal asymmetric current vs voltage curves in both the limits indicating the rectifying properties of the coupled quantum dots. Additionally we discuss the possibility to tune the switching behavior of the coupled dots by different gate geometries.
引用
收藏
页数:10
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