Direct Measurements of Self-Sputtering, Swelling, and Deposition Effects of N-Type Low-Energy Ion Implantations

被引：9

作者：

Qin, Shu ^{[1
]}

Zhuang, Kent ^{[1
]}

Hu, Yongjun Jeff ^{[1
]}

McTeer, Allen ^{[1
]}

Lu, Shifeng ^{[1
]}

机构：

[1] Micron Technol Inc, Boise, ID 83707 USA

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2009年 / 37卷 / 10期

关键词：

Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS); deposition; plasma doping (PLAD); self-sputtering; surface swelling; OXIDATION; SILICON;

D O I：

10.1109/TPS.2009.2029111

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Angle-resolved X-ray photoelectron spectroscopy method was used to study self-sputtering effects of different n-type low-energy doping techniques, including conventional monoatontic As-75 and P-31 beam-line ion implants and AsH3 plasma doping (PLAD). It has been found that the self-sputtering effects of the beam-line implants correlate with the mass of ion species. As beam-line implant shows more serious self-sputtering effect than monoatomic P and B beam-line implants. Very low energy P implants show surface-swelling phenomena. PLAD process using AsH3 gas species has no sputtering effects but has slight deposition under current process condition.

引用

收藏

页码：2082 / 2089

页数：8

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