Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

被引：88

作者：

Fiore, A ^{[1
]}

Borri, P

Langbein, W

Hvam, JM

Oesterle, U

Houdré, R

Stanley, RP

Ilegems, M

机构：

[1] Ecole Polytech Fed Lausanne, Inst Microoptoelect, CH-1015 Lausanne, Switzerland

[2] Tech Univ Denmark, Res Res COM, DK-2800 Lyngby, Denmark

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 23期

关键词：

D O I：

10.1063/1.126668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10+/-2 ps is measured. indicating a fast capture and relaxation of carriers inside the dots. (C) 2000 American Institute of Physics. [S0003-6951(00)05123-8].

引用

页码：3430 / 3432

页数：3

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