Monolithic photoreceiver constructed with InGaP/GaAs/InGaP MSM photodetectors and conventional GaAs MESFETs

被引：3
作者：
Doong, MS [1 ]
Liu, DS [1 ]
Lee, CT [1 ]
机构：
[1] Natl Cent Univ, Inst Opt Sci, Chungli 32054, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 07期
关键词：
metal-semiconductor field effect transistor; metal-semiconductor; metal photodetector; monolithic photoreceiver;
D O I：
10.1016/S0038-1101(00)00029-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a novel monolithic photoreceiver operating with a gain of 25 dB and a 3-dB bandwidth of above 2 GHz. In this photoreceiver, a high performance of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers was used. As well, a buffer logic invert circuit, feedback resistor and amplifier using the conventional MESFET's structure were designed to perform transimpedance amplifiers. The performances of the photoreceiver could be tuned through the feedback resistor. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1235 / 1238
页数：4
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