Characterization of SiO2/Si with a novel scanning capacitance microscope combined with an atomic force microscope

We have investigated the local electrical properties of an SiO2/Si structure using a novel scanning capacitance microscope (SCaM) combined with an atomic force microscope (AFM). The electrical properties of the SiO2/Si system is investigated using the microscope. We investigated a lateral p-n junction is formed by ion implantation of P into a lightly B-doped Si wafer followed by thermal oxidation. It is demonstrated that the local impurity concentration profiling is achieved by the C-V characteristics. In the nest experiment we have injected charge into SiO, and investigated the nature of charge storage at the SiO2/Si interface. Erasing of the written-in pattern was possible by applying a positive pulse. This paper will report on the development of a novel SCaM and its application to the characterization of SiO2/Si and fabrication of a charge storage device.