Raman characterization of lattice-matched GaInAsN layers grown on GaAs (001) substrates

被引：12
|
作者：
Hashimoto, A
Kitano, T
Nguyen, AK
Masuda, A
Yamamoto, A
Tanaka, S
Takahashi, M
Moto, A
Tanabe, T
Takagishi, S
机构：
[1] Fukui Univ, Fac Engn Dept, Dept Elect & Elect Engn, Fukui 9108507, Japan
[2] Japan Adv Inst Sci & Technol, Tatsunokuchi, Ishikawa 9231292, Japan
[3] Sumitomo Elect Ind Ltd, Basic High Technol Labs, Itami, Hyogo 6640016, Japan
[4] Sumitomo Elect Ind Ltd, Optoelect Labs, Itami, Hyogo 6640016, Japan
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 75卷 / 1-2期
关键词：
Raman characterization; GaInAsN layers; structural changes;
D O I：
10.1016/S0927-0248(02)00174-5
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
First systematic Raman scattering characterization for the nearly lattice-matched GaInAsN layers has been discussed to investigate the local structural changes as the In and the N compositions increase. It has been found that the formation of the spontaneously ordered clusters in the GaInNAs layers strongly depends on the In incorporation, and the degradation mechanism of the crystal quality of GaInAsN with the high In and N compositions may be completely different from the GaAsN systems. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：313 / 317
页数：5
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