Control of ferromagnetism in Cd1-xMnxTe based quantum wells

被引：0
作者：
Bertolini, M
Boukari, H
Ferrand, D
Cibert, J
Tatarenko, S
Gilles, B
Maslana, W
Kossacki, P
Gaj, JA
Dietl, T
机构：
[1] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, F-38402 St Martin Dheres, France
[2] CNRS, Lab Thermodynam & PhysicoChim Met, F-38042 Grenoble, France
[3] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
ACTA PHYSICA POLONICA A | 2002年 / 102卷 / 4-5期
关键词：
D O I：
10.12693/APhysPolA.102.603
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
New structures aiming at controlling the ferromagnetic properties of diluted magnetic semiconductor quantum wells are presented. The carrier density is controlled by applying a voltage across a p-i-n diode. A new method, creating a 2D hole gas by adjusting the distance between the quantum well and surface, offers opportunities for a broader range of structures.
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页码：603 / 608
页数：6
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