Asymmetric doping effects on electronic properties of coupled quantum wells in an in-plane magnetic field

The purpose of this work is to study the influence of asymmetric doping positions on the electronic properties of tunnel-coupled double quantum wells (DQWs) in an in-plane magnetic field. The doping asymmetry introduces peculiarities in the gap due to the anticrossing of the two branches of the electronic dispersion relations. The built-in potential caused by the doping dramatically affects the self-consistent Fermi energy renormalization and strongly opposes an applied bias. As a result, the magnetization shows an abrupt jump when the transition from vertical to horizontal anticrossing occurs. The absolute value of the magnetoinduced voltage of two dimensional electrons in DQWs increases if the Fermi level is localized near such peculiarities and shows additional features in comparison with the symmetric-doping case. We suggest that the transverse voltage induced by a magnetic field and the magnetization are powerful tools for the experimental study of doping characteristics and equilibrium magnetic properties of quantum heterostructures. (C) 2000 American Institute of Physics. [S0021-8979(00)06111-9].