Low-Dispersion, High-voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

被引:35
作者
Alshahed, Muhammad [1 ]
Heuken, Lars [1 ]
Alomari, Mohammed [1 ]
Cora, Ildiko [2 ]
Toth, Lajos [2 ]
Pecz, Bela [2 ]
Waechter, Clemens [3 ]
Bergunde, Thomas [3 ]
Burghartz, Joachim N. [1 ]
机构
[1] Inst Mikroelekt Stuttgart, D-70569 Stuttgart, Germany
[2] Hungarian Acad Sci, Inst Tech Phys & Mat Sci, Ctr Energy Res, H-1245 Budapest, Hungary
[3] Azur Space Solar Power GmbH, D-74072 Heilbronn, Germany
关键词
Bulk GaN; current collapse; dynamic R-ON; GaN high electron mobility transistor (HEMT); leakage currents; thermal resistance; power semiconductor devices; power transistors; self-heating; semiconductor device reliability; thermal power dissipation; threading dislocations; THREADING DISLOCATIONS; RELIABILITY; TRANSISTORS; IMPACT;
D O I
10.1109/TED.2018.2832250
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the advantages of GaN high electron mobility transistors (HEMTs) grown on native GaN over GaN/Si or GaN/sapphire substrates are investigated and correlated with epitaxial material quality. Transmission electron microscopy plan-view and cross-sectional analyses of GaN/GaN reveal dislocation densities below 1 x 10(6) cm(-2), which is at least three orders of magnitude lower than that of GaN/Si or GaN/sapphire. In the case of GaN/Si, the dislocations not only originate from the substrate/nucleation layer interface, but also the strain relief and isolation buffer stacks are main contributors to the dislocation density. GaN/GaN HEMTs show superior electrical and thermal performance and feature three orders of magnitude lower OFF-state leakage. The current collapse (also referred to as current dispersion or R-ON-increase) after stress bias is less than 15% compared with 50% in the case of GaN/Si. A 2% drop of the ON-state current due to self-heating in dc operation when compared with 13% and 16% for GaN/Si and GaN/sapphire, respectively. The GaN/Si thermal performance becomes comparable to that of GaN/GaN only after substrate removal. Therefore, GaN/GaN provides high ON-state current, low OFF-state leakage current, minimal current collapse, and enhanced thermal power dissipation capability at the same time, which can directly be correlated with the absence of high dislocation density.
引用
收藏
页码:2939 / 2947
页数:9
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