Barrier height nature and photovoltaic properties of (2-(2-(2-nitrophenyl) diazenyl)malononitrile)/p-Si heterojunction

Small molecule, (2-(2-(2-nitrophenyl)diazenyl)malononitrile) (NPDAM), is synthesized and its chemical structure is characterized by different analyses. NPDAM powder is identified as polycrystalline monoclinic structure, whereas the thermally deposited films have nanostructure character with average particle size of 39 nm. NPDAM films are utilized for manufacturing hybrid solar cells in the structure of Au/NPDAM/p-Si/Al. The dark current-voltage (I-V) curves of the diode are measured in the temperature range 303-383 K and the thermionic emission theory is employed to extract the ideality factor, n, and potential barrier height, empty set at forward applied voltages of V <= 0.20 volt. The n value increases, whereas the empty set value decreases with decreasing temperature. This behavior is analyzed in terms of the lateral inhomogeneous barrier following Gaussian distribution at the NPDAM/p-Si interface. Cheung and Cheung functions are used for extracting the values of series resistance, R-s, n( )and empty set . The behavior of these parameters as a function of temperature is discussed. At forward applied voltages 0.20<V <= 2, the I-V relation reveals crossover from thermionic emission to square power law. This behavior is discussed by means of the space charge limited current. Under illumination, the device exhibits a response to light exposure with a photoelectrical conversion efficiency of 2.91 %.