Manipulation of linear and nonlinear optical properties of type I and type II quantum ring GaAs/AlxGa1-xAs

被引：6
作者：
Sellami, Rihab [1 ,2 ]
Kehili, Mohamed Souhail [1 ,2 ]
Ben Mansour, Afef [1 ,2 ]
Melliti, Adnen [1 ,2 ]
机构：
[1] Univ Carthage, Inst Preparatoire Etud Sci & Tech, Lab Mat Mol & Applicat, BP51, La Marsa 2070, Tunisia
[2] Univ Tunis, Ecole Natl Super Ingn Tunis, 5 Rue Taha Hussein Montfleury, Tunis 1008, Tunisia
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2021年 / 53卷 / 05期
关键词：
Quantum ring; Type I; Type II; GaAs; Nonlinear; Aborption; Refrective index; SOLAR-CELLS; PHOTOLUMINESCENCE; TIME;
D O I：
10.1007/s11082-021-02863-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a theoretical study of linear and nonlinear optical properties of carriers in types I and II GaAs /AlxGa1-xAs quantum rings (QRs). We are interested in the effects of incident optical intensity, Al concentration in the barrier and rim height (h(M)) on linear and nonlinear absorption and refractive index, for both types of QR. After a detailed analysis of the results and a comparison between the optical properties of type I and II QRs, we conclude that we can act on the linear and non-linear absorption coefficient and the refractive index by affecting the parameters of these nanostructures. Thus, GaAs /AlxGa1-xAs quantum rings are appropriate for tunable nano-optoelectronic devices.
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页数：10
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