Magnetoresistance across metal-insulator transition in VO2 micro crystals

被引：7
|
作者：
Singh, Davinder [1 ]
Yadav, C. S. [2 ]
Viswanath, B. [1 ]
机构：
[1] Indian Inst Technol Mandi, Sch Engn, Mandi 175001, Himachal Prades, India
[2] Indian Inst Technol Mandi, Sch Basic Sci, Mandi 175001, Himachal Prades, India
来源：
MATERIALS LETTERS | 2017年 / 196卷
关键词：
Metal insulator transition; Magnetoresistance; Electrical properties; Temperature coefficient of resistance; OXIDES;
D O I：
10.1016/j.matlet.2017.03.066
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the effect of magnetic field (H) on the insulator-metal (IM) transition in VO2 microcrystals. We observed that the temperature coefficient of resistance (TCR) in the monoclinic phase (T < 338 K) varies from negative to positive values on the application of external magnetic field, and follows similar to H-2 behavior. The magneto-resistance (MR) of VO2 microcrystals also varies from small negative to positive value across the transition temperature. The presented aspects are relevant for understanding the influence of magnetic field on the electrical resistance of functional oxides across phase transition. (C) 2017 Elsevier B. V. All rights reserved.
引用
收藏
页码：248 / 251
页数：4
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