MOF Nanosheet Reconstructed Two-Dimensional Bionic Nanochannel for Protonic Field-Effect Transistors

被引:53
|
作者
Wu, Guo-Dong [1 ]
Zhou, Hai-Lun [1 ]
Fu, Zhi-Hua [1 ]
Li, Wen-Hua [1 ]
Xiu, Jing-Wei [1 ]
Yao, Ming-Shui [1 ]
Li, Qiao-hong [1 ]
Xu, Gang [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, State Key Lab Struct Chem, Fujian Inst Res Struct Matter, 155 Yangqiao Rd West, Fuzhou 350002, Fujian, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350108, Fujian, Peoples R China
基金
中国国家自然科学基金;
关键词
bionic proton nanochannels; electrical device; metal-organic framework; proton transport; thin film;
D O I
10.1002/anie.202100356
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The construction of hydrophobic nanochannel with hydrophilic sites for bionic devices to proximally mimick real bio-system is still challenging. Taking the advantages of MOF chemistry, a highly oriented CuTCPP thin film has been successfully reconstructed with ultra-thin nanosheets to produce abundant two-dimensional interstitial hydrophobic nanochannels with hydrophilic sites. Different from the classical active-layer material with proton transport in bulk, CuTCPP thin film represents a new type of active-layer with proton transport in nanochannel for bionic proton field-effect transistor (H+-FETs). The resultant device can reversibly modulate the proton transport by varying the voltage on its gate electrode. Meanwhile, it shows the highest proton mobility of approximate to 9.5x10(-3) cm(2) V-1 s(-1) and highest on-off ratio of 4.1 among all of the reported H+-FETs. Our result demonstrates a powerful material design strategy for proximally mimicking the structure and properties of bio-systems and constructing bionic electrical devices.
引用
收藏
页码:9931 / 9935
页数:5
相关论文
共 50 条
  • [41] A two-dimensional spin field-effect switch
    Yan, Wenjing
    Txoperena, Oihana
    Llopis, Roger
    Dery, Hanan
    Hueso, Luis E.
    Casanova, Felix
    NATURE COMMUNICATIONS, 2016, 7
  • [42] A two-dimensional spin field-effect switch
    Wenjing Yan
    Oihana Txoperena
    Roger Llopis
    Hanan Dery
    Luis E. Hueso
    Fèlix Casanova
    Nature Communications, 7
  • [43] Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors
    Kim, Raseong
    Neophytou, Neophytos
    Paul, Abhijeet
    Klimeck, Gerhard
    Lundstrom, Mark S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (04): : 1628 - 1631
  • [44] Hysteresis Effect in Two-Dimensional Bi2Te3 Nanoplate Field-Effect Transistors
    Liu, Junliang
    Pan, Wenwu
    Wang, Han
    Zhang, Zekai
    Zhang, Songqing
    Yuan, Guang
    Yuan, CaiLei
    Ren, Yongling
    Lei, Wen
    ADVANCED ELECTRONIC MATERIALS, 2021, 7 (01):
  • [45] Molecular Reorganization in Organic Field-Effect Transistors and Its Effect on Two-Dimensional Charge Transport Pathways
    Liscio, Fabiola
    Albonetti, Cristiano
    Broch, Katharina
    Shehu, Arian
    Quiroga, Santiago David
    Ferlauto, Laura
    Frank, Christian
    Kowarik, Stefan
    Nervo, Roberto
    Gerlach, Alexander
    Milita, Silvia
    Schreiber, Frank
    Biscarini, Fabio
    ACS NANO, 2013, 7 (02) : 1257 - 1264
  • [46] GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas
    Shinohara, Keisuke
    King, Casey
    Carter, Andrew D.
    Regan, Eric J.
    Arias, Andrea
    Bergman, Joshua
    Urteaga, Miguel
    Brar, Berinder
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (03) : 417 - 420
  • [47] Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
    Du, Yuchen
    Yang, Lingming
    Liu, Han
    Ye, Peide D.
    APL MATERIALS, 2014, 2 (09):
  • [48] Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors
    McMorrow, Julian J.
    Cress, Cory D.
    Arnold, Heather N.
    Sangwan, Vinod K.
    Jariwala, Deep
    Schmucker, Scott W.
    Marks, Tobin J.
    Hersam, Mark C.
    APPLIED PHYSICS LETTERS, 2017, 110 (07)
  • [49] Tunable electrical contacts in two-dimensional silicon field-effect transistors: The significance of surface engineering
    Sang, Pengpeng
    Wang, Qianwen
    Yi, Guangzheng
    Wu, Jixuan
    Li, Yuan
    Chen, Jiezhi
    APPLIED SURFACE SCIENCE, 2023, 614
  • [50] Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures
    Jiang, Shengwei
    Li, Lizhong
    Wang, Zefang
    Shan, Jie
    Mak, Kin Fai
    NATURE ELECTRONICS, 2019, 2 (04) : 159 - 163