Selection of Metal Oxide Charge Transport Layers for Colloidal Quantum Dot LEDs

被引：191

作者：

Wood, V. ^{[1
]}

Panzer, M. J. ^{[1
]}

Halpert, J. E. ^{[1
]}

Caruge, J. -M. ^{[1
]}

Bawendi, M. G. ^{[1
]}

Bulovic, V. ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Dept Chem, Cambridge, MA 02139 USA

来源：

ACS NANO | 2009年 / 3卷 / 11期

基金：

美国国家科学基金会;

关键词：

quantum dots; electroluminescence; photoemission spectroscopy; LIGHT-EMITTING-DIODES; CADMIUM SELENIDE NANOCRYSTALS; INJECTION LAYERS; DEVICES; ELECTROLUMINESCENCE; GREEN; LUMINESCENCE; MONOLAYERS; SURFACES; POLYMER;

D O I：

10.1021/nn901074r

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We investigate the effect of the electronic energy level positioning, conductivity, and morphology of metal oxide charge transport layers on the performance of light emitting devices (LEDs) that consist of a colloidally synthesized quantum dot (QD) luminescent film embedded between electron and hole injecting ceramic layers. We demonstrate that understanding of these material properties and their effect on charging processes in QDs enables the systematic design of higher efficiency QD-LEDs and excitation of QDs with different emission colors using the same device structure.

引用

页码：3581 / 3586

页数：6

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