Development of High TC PMN-PZT Piezoelectric Single Crystals by the Solid-State Crystal Growth (SSCG) Technique

Single crystals in the ternary MPB PMNPZ-PT system with relatively high T(C)s and E(C)s were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on T(RT) (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high T(C)/E(C) PMN-PZT single crystals (T(RT)=144 degrees C and E(C)=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators.