Ion beam synthesis of graphite and diamond in silicon carbide

被引：21

作者：

Heera, V ^{[1
]}

Skorupa, W

Pécz, B

Dobos, L

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, D-01314 Dresden, Germany

[2] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期

关键词：

D O I：

10.1063/1.126493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high dose of 1x10(18) cm(-2), 60 keV carbon ions was implanted into single crystalline 6H silicon carbide (SiC) at elevated temperatures. The formation of carbon phases in the crystalline SiC lattice was investigated by cross sectional transmission electron microscopy. An amorphous, carbon rich phase was produced at 300 degrees C. Precipitates of graphite were obtained at 600 degrees C, whereas at 900 degrees C small diamond grains were produced. These grains are in perfect epitaxial relation with the surrounding SiC lattice. (C) 2000 American Institute of Physics. [S0003-6951(00)02820-5].

引用

页码：2847 / 2849

页数：3

共 16 条

[1] Wide bandgap semiconductor materials for high temperature electronics [J].

Chalker, PR .

THIN SOLID FILMS, 1999, 343 :616-622

[2] Phase formation due to high dose aluminum implantation into silicon carbide [J].

Heera, V ;

Reuther, H ;

Stoemenos, J ;

Pécz, B .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :78-85

[3] Ion implantation and annealing effects in silicon carbide [J].

Heera, V ;

Skorupa, W .

MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 :241-252

[4] High-dose oxygen ion implantation into 6H-SiC [J].

Ishimaru, M ;

Dickerson, RM ;

Sickafus, KE .

APPLIED PHYSICS LETTERS, 1999, 75 (03) :352-354

[5] Ion-implantation in diamond and diamond films: Doping, damage effects and their applications [J].

Kalish, R .

APPLIED SURFACE SCIENCE, 1997, 117 :558-569

[6] Mechanisms in the ion beam synthesis of SiC layers in silicon [J].

Lindner, JKN ;

Stritzker, B .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :528-533

[7] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398

[8]

Panknin D, 1996, APPL PHYS A-MATER, V62, P155

[9]

Pierson H. O., 1994, HDB CARBON GRAPHITE

[10] Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization [J].

Serre, C ;

CalvoBarrio, L ;

PerezRodriguez, A ;

RomanoRodriguez, A ;

Morante, JR ;

Pacaud, Y ;

Kogler, R ;

Heera, V ;

Skorupa, W .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) :6907-6913

← 1 2 →