SHG and AFM study of PECVD a-Si:H films

被引：7
作者：
Alexandrova, S
Danesh, P
Maslyanitsyn, IA
机构：
[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[2] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia
来源：
VACUUM | 2002年 / 69卷 / 1-3期
关键词：
amorphous silicone; SHG; AFM; stress;
D O I：
10.1016/S0042-207X(02)00364-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In the present paper, results are presented on the dependence of the second harmonic generation (SHG) in a-Si:H on the substrate material. The investigated structures were a-Si:H films deposited onto three different substrates, namely, fused silica plates, Corning glass 7059 and soda-lime glass. It was established that the SHG depended substantially on the substrate material. The effect of the intrinsic stress due to the film-substrate mismatch strain has been considered. Investigation of the roughness of the substrate surface as estimated from atomic force microscopy measurements has shown no significant differences. Formation of microvoids in the a-Si:H films is observed with a possible implication as an SHG source. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：391 / 394
页数：4
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