Efficient p-n Heterojunction Perovskite Solar Cell without a Redundant Electron Transport Layer and Interface Engineering

被引:11
作者
Huang, Like [1 ]
Wang, Jiahao [1 ]
Zhu, Yuejin [1 ,2 ]
机构
[1] Ningbo Univ, Sch Phys Sci & Technol, Dept Microelect Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China
[2] Ningbo Univ, Coll Sci & Technol, Sch Informat Engn, Ningbo 315300, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
PERFORMANCE;
D O I
10.1021/acs.jpclett.1c00417
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report an electron transport layer-free perovskite solar cell (PSC) without interface engineering, whose key is a p-n heterojunction consisting of ITO/n-type FA(0.9)Cs(0.1)PbI(3-x)Cl(x)/p-type spiro-MeOTAD/Ag. The naturally matched energy levels between FA(0.9)Cs(0.1)PbI(3-x)Cl(x) and ITO make interface engineering unnecessary. The FA(0.9)Cs(0.1)PbI(3-x)Cl(x) film has a wide antisolvent processing window, favoring large-area production. The self-seeding growth method regulates the energy levels and work function of the FA(0.9)Cs(0.1)PbI(3-x)Cl(x) film via modulating the shape and distribution of residual PbI2. Interface band bending is confirmed by double-side photoluminescence (PL) measurement. Reduced PL is introduced for unambiguous charge transfer analysis without interference caused by different absorbance. Accordingly, enhanced ITO/perovskite interface energy level alignment and device performance (efficiency of 17.48% and V-oc of 1.02 V) are demonstrated. Such simplified but efficient PSCs featuring a wide antisolvent processing window have great potential in practical applications.
引用
收藏
页码:2266 / 2272
页数:7
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