Recombination lifetime of charge carriers in DLC thin films

被引：5
|
作者：
Bak, GW [1 ]
Dluzniewski, M [1 ]
Staryga, E [1 ]
Kania, S [1 ]
Walocha, J [1 ]
机构：
[1] Lodz Tech Univ, Inst Phys, PL-93005 Lodz, Poland
来源：
DIAMOND AND RELATED MATERIALS | 2000年 / 9卷 / 07期
关键词：
diamond-like carbon; carrier lifetime; transient currents; diffusion capacitance;
D O I：
10.1016/S0925-9635(00)00252-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Decay of photocurrent in diamond-like carbon (DLC) thin films and broadband dielectric measurements of rectifying n-Si/DLC junctions were used to find the recombination lifetime of charge carriers in DLC films. The recombination lifetime found from the two methods was between 10(-4) and 10(-3) s. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：1357 / 1361
页数：5
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