Signatures of Quantum Transport Steps in Bi2Se3 Single Crystal

被引：1

作者：

Sultana, Rabia ^{[1
,2
]}

Sharma, Deepak ^{[1
,2
]}

Meena, R. S. ^{[1
,2
]}

Awana, V. P. S. ^{[1
,2
]}

机构：

[1] CSIR, Natl Phys Lab, Dr KS Krishnan Rd, New Delhi 110012, India

[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2019年 / 32卷 / 06期

关键词：

Topological insulators; Magneto resistance; Quantum properties;

D O I：

10.1007/s10948-019-5060-1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report signatures of quantum magneto transport steps in a Bi2Se3 single crystal. The Bi2Se3 crystal is grown by self-flux method through solid-state reaction. Details of its structural analysis along with physical properties in terms of low temperature and high field transport, thermal (heat capacity), Raman, X-ray photo electron and angle resolved photo electron spectroscopy were reported earlier (J. Sup. Novel. Mag. 30, 2031 2017). In a present short letter, we show the details of its 2K and up to 14 Tesla magneto transport, exhibiting quantum transport (QT) like steps above say 11 Tesla field. The possible QT steps cannot be modelled with the SdH (Shubnikov-de Haas) or other possible quantum oscillations. The observed QT like steps are possibly the result of the mixed out-of-plane R-xy(H) and in-plane R-xx(H) contributions from the misaligned [00l] planes of the studied crystal and this may happen with other studied topological insulator (TI) crystals as well. Our careful assessment of crystal XRD data shows the same.

引用

页码：1497 / 1499

页数：3

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