Transient-enhanced diffusion in shallow-junction formation

被引：4

作者：

Fiory, AT ^{[1
]}

Chawda, SG

Madishetty, S

Mehta, VR

Ravindra, NM

McCoy, SP

Lefrançois, ME

Bourdelle, KK

McKinley, JM

Gossmann, HJL

Agarwal, A

机构：

[1] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA

[2] Vortek Ind, Vancouver, BC V6P 6T7, Canada

[3] Agere Syst, Orlando, FL USA

[4] Agere Syst, Murray Hill, NJ 07974 USA

[5] Axcelis Technol, Beverly, MA 01915 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 10期

关键词：

ion implantation; spike annealing; electrical activation;

D O I：

10.1007/s11664-002-0034-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Shallow junctions are formed in crystalline Si by low-energy ion implantation of B+, P+, or As+ species accompanied by electrical activation of dopants by rapid thermal annealing and the special case of spike annealing. Diffusion depths were determined by secondary ion-mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse-bias diode-leakage measurements. The B+ and P+ species exhibit transient-enhanced diffusion (TED) caused by transient excess populations of Si interstitials. The electrically activated fraction of implanted dopants depends mainly on the temperature for B+ species, while for P+ species, it depends on both temperature and P+ dose. The relatively small amount of diffusion associated with As' implants is favorable for shallow-junction formation with spike annealing.

引用

页码：999 / 1003

页数：5

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