Properties of Ga1-xMnxAs with high Mn composition (x>0.1)

被引：60
作者：
Chiba, D.
Nishitani, Y.
Matsukura, F.
Ohno, H.
机构：
[1] Tohoku Univ, Lab Nanoelect & Spintron, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, Semicond Spintron Project, Aoba Ku, Sendai, Miyagi 9800023, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 12期
关键词：
D O I：
10.1063/1.2715095
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A series of Ga1-xMnxAs layers with high Mn compositions x (=0.075-0.200) has been grown and investigated. Magnetization, magnetotransport, and magneto-optical properties reveal that the layers have single ferromagnetic phase as in the case of typical (Ga,Mn)As. The authors also describe the variation of magnetic anisotropy with x and the effect of low temperature annealing on Curie temperature. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 26 条
[1]   Magneto-optic effect of the ferromagnetic diluted magnetic semiconductor Ga1-xMnxAs [J].
Ando, K ;
Hayashi, T ;
Tanaka, M ;
Twardowski, A .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6548-6550
[2]   Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga1-xMnx)As [J].
Beschoten, B ;
Crowell, PA ;
Malajovich, I ;
Awschalom, DD ;
Matsukura, F ;
Shen, A ;
Ohno, H .
PHYSICAL REVIEW LETTERS, 1999, 83 (15) :3073-3076
[3]   Electric-field control of ferromagnetism in (Ga,Mn)As [J].
Chiba, D. ;
Matsukura, F. ;
Ohno, H. .
APPLIED PHYSICS LETTERS, 2006, 89 (16)
[4]   Effect of low-temperature annealing on (Ga,Mn)As trilayer structures [J].
Chiba, D ;
Takamura, K ;
Matsukura, F ;
Ohno, H .
APPLIED PHYSICS LETTERS, 2003, 82 (18) :3020-3022
[5]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[6]   Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F .
PHYSICAL REVIEW B, 2001, 63 (19)
[7]   Ferromagnetic moment and antiferromagnetic coupling in (Ga,Mn)As thin films [J].
Edmonds, KW ;
Farley, NRS ;
Johal, TK ;
van der Laan, G ;
Campion, RP ;
Gallagher, BL ;
Foxon, CT .
PHYSICAL REVIEW B, 2005, 71 (06)
[8]   Mn interstitial diffusion in (Ga,Mn)As [J].
Edmonds, KW ;
Boguslawski, P ;
Wang, KY ;
Campion, RP ;
Novikov, SN ;
Farley, NRS ;
Gallagher, BL ;
Foxon, CT ;
Sawicki, M ;
Dietl, T ;
Nardelli, MB ;
Bernholc, J .
PHYSICAL REVIEW LETTERS, 2004, 92 (03) :4
[9]   Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As [J].
Hayashi, T ;
Hashimoto, Y ;
Katsumoto, S ;
Iye, Y .
APPLIED PHYSICS LETTERS, 2001, 78 (12) :1691-1693
[10]   Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors -: art. no. 165204 [J].
Jungwirth, T ;
Wang, KY ;
Masek, J ;
Edmonds, KW ;
König, J ;
Sinova, J ;
Polini, M ;
Goncharuk, NA ;
MacDonald, AH ;
Sawicki, M ;
Rushforth, AW ;
Campion, RP ;
Zhao, LX ;
Foxon, CT ;
Gallagher, BL .
PHYSICAL REVIEW B, 2005, 72 (16)
123