Highly reliable 500 mW laser diodes with epitaxially grown AlON coating for high-density optical storage

被引：27

作者：

Kamikawa, T. ^{[1
]}

Kawaguchi, Y. ^{[1
]}

Vaccaro, P. O. ^{[1
]}

Ito, S. ^{[1
]}

Kawanishi, H. ^{[1
]}

机构：

[1] Sharp Co Ltd, Adv Technol Res Labs, Tenri, Nara 6328567, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期

关键词：

aluminium compounds; gallium compounds; III-V semiconductors; indium compounds; optical films; optical storage; semiconductor lasers; semiconductor thin films; wide band gap semiconductors;

D O I：

10.1063/1.3184595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly reliable operation of 405 nm laser diodes for high-density optical storage was demonstrated. Introduction of epitaxially grown AlON layer between the front facet and normal coating layer was shown to be effective to suppress catastrophic optical damage at the laser facet. Stable operation in excess of 1000 h was confirmed at an output power of 500 mW in a pulsed-mode at a case temperature of 80 degrees C.

引用

页数：3

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