Independent tuning of excitonic emission energy and decay time in single semiconductor quantum dots

被引：10

作者：

Hoefer, B. ^{[1
]}

Zhang, J. ^{[1
]}

Wildmann, J. ^{[2
]}

Zallo, E. ^{[1
,5
]}

Trotta, R. ^{[2
]}

Ding, F. ^{[1
,3
]}

Rastelli, A. ^{[2
]}

Schmidt, O. G. ^{[1
,4
]}

机构：

[1] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

[2] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, Altenbergerstr 69, A-4040 Linz, Austria

[3] Leibniz Univ Hannover, Inst Festkorperphys, Appelstr 2, D-30167 Hannover, Germany

[4] TU Chemnitz, Mat Syst Nanoelect, D-09107 Chemnitz, Germany

[5] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 15期

基金：

欧洲研究理事会;

关键词：

Excitons - Photons - Locks (fasteners) - Electric fields - Tuning - Piezoelectric actuators - Particle beams - Semiconductor quantum dots;

D O I：

10.1063/1.4979481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Independent tuning of emission energy and decay time of neutral excitons confined in single self-assembled In(Ga) As/GaAs quantum dots is achieved by simultaneously employing vertical electric fields and lateral biaxial strain fields. By locking the emission energy via a closed-loop feedback on the piezoelectric actuator used to control the strain in the quantum dot, we continuously decrease the decay time of an exciton from 1.4 to 0.7 ns. Both perturbations are fully electrically controlled and their combination offers a promising route to engineer the indistinguishability of photons emitted from spatially separated single photon sources. Published by AIP Publishing.

引用

页数：4

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