Enhanced light extraction in GaInN light-emitting diode with pyramid reflector

被引：59

作者：

Xi, J. -Q. ^{[1
]}

Luo, Hong

Pasquale, Alyssa J.

Kim, Jong Kyu

Schubert, E. Fred

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 21-24期

基金：

美国国家科学基金会;

关键词：

GaN; light extraction; light-emitting diode (LED); reflector;

D O I：

10.1109/LPT.2006.885210

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInN light-emitting diodes (LEDs) that employ a reflector consisting of an array of three-dimensional (3-D) SiO2 pyramids and a Ag layer are demonstrated to have enhanced light extraction compared with GaInN LEDs with planar Ag reflector. Ray tracing simulations reveal that the pyramid reflector provides 14.1% enhancement in extraction efficiency. Consistent with the simulation, it is experimentally demonstrated that GaInN LEDs with the pyramid reflector show 13.9% higher light output than LEDs with a planar Ag reflector. The enhancement is attributed to the appearance of an additional escape cone for light extraction enabled by the 3-D pyramid reflector.

引用

页码：2347 / 2349

页数：3

共 9 条

[1] Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals [J].

Boroditsky, M ;

Krauss, TF ;

Coccioli, R ;

Vrijen, R ;

Bhat, R ;

Yablonovitch, E .

APPLIED PHYSICS LETTERS, 1999, 75 (08) :1036-1038

[2] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[3] GAAS/GAALAS SURFACE EMITTING IR LED WITH BRAGG REFLECTOR GROWN BY MOCVD [J].

KATO, T ;

SUSAWA, H ;

HIROTANI, M ;

SAKA, T ;

OHASHI, Y ;

SHICHI, E ;

SHIBATA, S .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :832-835

[4] GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer [J].

Kim, JK ;

Gessmann, T ;

Schubert, EF ;

Xi, JQ ;

Luo, H ;

Cho, J ;

Sone, C ;

Park, Y .

APPLIED PHYSICS LETTERS, 2006, 88 (01)

[5]

Kondoh Y., 2001, U.S. Patent, Patent No. [6,194,743, 6194743]

[6] High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency [J].

Krames, MR ;

Ochiai-Holcomb, M ;

Höfler, GE ;

Carter-Coman, C ;

Chen, EI ;

Tan, IH ;

Grillot, P ;

Gardner, NF ;

Chui, HC ;

Huang, JW ;

Stockman, SA ;

Kish, FA ;

Craford, MG ;

Tan, TS ;

Kocot, CP ;

Hueschen, M ;

Posselt, J ;

Loh, B ;

Sasser, G ;

Collins, D .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2365-2367

[7]

THOMPSON GHB, 1980, PHYS SEMICONDUCTOR L, P309

[8] High-power AlGaInN flip-chip light-emitting diodes [J].

Wierer, JJ ;

Steigerwald, DA ;

Krames, MR ;

O'Shea, JJ ;

Ludowise, MJ ;

Christenson, G ;

Shen, YC ;

Lowery, C ;

Martin, PS ;

Subramanya, S ;

Götz, W ;

Gardner, NF ;

Kern, RS ;

Stockman, SA .

APPLIED PHYSICS LETTERS, 2001, 78 (22) :3379-3381

[9] Omnidirectional reflector using nanoporous SiO2 as a low-refractive-index material [J].

Xi, JQ ;

Ojha, M ;

Cho, W ;

Plawsky, JL ;

Gill, WN ;

Gessmann, T ;

Schubert, EF .

OPTICS LETTERS, 2005, 30 (12) :1518-1520

← 1 →