Towards field-effect controlled graphene-enhanced Raman spectroscopy of cobalt octaethylporphyrin molecules

被引:3
|
作者
Sleziona, Stephan [1 ,2 ]
Rauls, Simon [1 ,2 ]
Heckhoff, Tobias [1 ,2 ]
Christen, Leonard [1 ,2 ]
Pollmann, Erik [1 ,2 ]
Madauss, Lukas [1 ,2 ]
Franzka, Steffen [3 ]
Lorke, Axel [1 ,2 ]
Wende, Heiko [1 ,2 ]
Schleberger, Marika [1 ,2 ]
机构
[1] Univ Duisburg Essen, Fac Phys, Lotharstr 1, D-47057 Duisburg, Germany
[2] Univ Duisburg Essen, CENIDE, Lotharstr 1, D-47057 Duisburg, Germany
[3] Univ Duisburg Essen, ICAN, Lotharstr 1, D-47057 Duisburg, Germany
关键词
graphene; graphene-enhanced Raman scattering; field-effect transistor; argon cluster; encapsulation; magnetic molecules;
D O I
10.1088/1361-6528/abde60
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
During the last decade graphene-enhanced Raman spectroscopy has proven to be a powerful tool to detect and analyze minute amounts of molecules adsorbed on graphene. By using a graphene-based field-effect device the unique opportunity arises to gain a deeper insight into the coupling of molecules and graphene as graphene's Fermi level can be controlled by the transistors gate voltage. However, the fabrication of such a device comes with great challenges because of contaminations stemming from processing the device inevitably prevent direct adsorption of the molecules onto graphene rendering it unsuitable for field-effect controlled graphene-enhanced Raman spectroscopy measurements/experiments. In this work, we solve this problem by establishing two different fabrication procedures for such devices, both of which are in addition compatible with large area and scalable production requirements. As a first solution, selective argon cluster irradiation is shown to be an efficient way to remove resist residues after processing. We provide evidence that after the irradiation the enhancement of the molecular Raman signal can indeed be measured, demonstrating that this procedure cleans graphene's surface sufficiently enough for direct molecular adsorption. As a second solution, we have developed a novel stacking method to encapsulate the molecules in between two graphene layers to protect the underlying graphene and molecular layer from the harsh conditions during the photolithography process. This method combines the advantages of dry stacking, which leads to a perfectly clean interface, and wet stacking processes, which can easily be scaled up for large area processing. Both approaches yield working graphene transistors with strong molecular Raman signals stemming from cobalt octaehtylporphyrin, a promising and prototypical candidate for spintronic applications, and are therefore suitable for graphene based molecular sensing applications.
引用
收藏
页数:10
相关论文
共 50 条
  • [21] Charge Transfer Effect on Raman and Surface Enhanced Raman Spectroscopy of Furfural Molecules
    Wan, Fu
    Shi, Haiyang
    Chen, Weigen
    Gu, Zhaoliang
    Du, Lingling
    Wang, Pinyi
    Wang, Jianxin
    Huang, Yingzhou
    NANOMATERIALS, 2017, 7 (08):
  • [22] Towards Amplifier Design with a SiC Graphene Field-Effect Transistor
    Aguirre-Morales, J. D.
    Fregonese, S.
    Dwivedi, A. D. D.
    Zimmer, T.
    Khenissa, M. S.
    Belhaj, M. M.
    Happy, H.
    2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2015, : 93 - 96
  • [23] Operando photoelectron spectroscopy analysis of graphene field-effect transistors
    Lu, Yi-Ying
    Yang, Yu-Lun
    Chuang, Pin-Yi
    Jhou, Jie
    Hsu, Jui-Hung
    Hsieh, Shang-Hsien
    Chen, Chia-Hao
    NANOTECHNOLOGY, 2022, 33 (47)
  • [24] Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties
    Duyoung Choi
    Cihan Kuru
    Youngjin Kim
    Gunwoo Kim
    Taekyoung Kim
    Renkun Chen
    Sungho Jin
    Nanoscale Research Letters, 2015, 10
  • [25] Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties
    Choi, Duyoung
    Kuru, Cihan
    Kim, Youngjin
    Kim, Gunwoo
    Kim, Taekyoung
    Chen, Renkun
    Jin, Sungho
    NANOSCALE RESEARCH LETTERS, 2015, 10
  • [26] Graphene Field-Effect Transistor as a Probe of Doping by Adsorbed Oxygen Molecules
    Blechta, Vaclav
    Mergl, Martin
    Drogowska, Karolina
    Kucera, Lukas
    Vales, Vaclav
    Cervenka, Jiri
    Kalbac, Martin
    XXXVI MODERNI ELEKTROCHEMICKE METODY, 2016, : 18 - 22
  • [27] Towards field malaria diagnosis using surface enhanced Raman spectroscopy
    Chen, Keren
    Xiong, Aoli
    Yuen, Clement
    Preiser, Peter
    Liu, Quan
    BIOPHOTONICS: PHOTONIC SOLUTIONS FOR BETTER HEALTH CARE V, 2016, 9887
  • [28] Orientation analysis of pentacene molecules in organic field-effect transistor devices using polarization-dependent Raman spectroscopy
    Bishwajeet Singh Bhardwaj
    Takeshi Sugiyama
    Naoko Namba
    Takayuki Umakoshi
    Takafumi Uemura
    Tsuyoshi Sekitani
    Prabhat Verma
    Scientific Reports, 9
  • [29] Orientation analysis of pentacene molecules in organic field-effect transistor devices using polarization-dependent Raman spectroscopy
    Bhardwaj, Bishwajeet Singh
    Sugiyama, Takeshi
    Namba, Naoko
    Umakoshi, Takayuki
    Uemura, Takafumi
    Sekitani, Tsuyoshi
    Verma, Prabhat
    SCIENTIFIC REPORTS, 2019, 9 (1)
  • [30] Ultraviolet Irradiation-Controlled Memory Effect in Graphene Field-Effect Transistors
    Meng, Jie
    Wu, Han-Chun
    Chen, Jing-Jing
    Lin, Fang
    Bie, Ya-Qing
    Shvets, Igor V.
    Yu, Da-Peng
    Liao, Zhi-Min
    SMALL, 2013, 9 (13) : 2240 - 2244