Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon

被引：14

作者：

Buffolo, Matteo ^{[1
]}

Samparisi, Fabio ^{[1
]}

Rovere, Lorenzo ^{[1
]}

De Santi, Carlo ^{[1
]}

Jung, Daehwan ^{[2
]}

Norman, Justin ^{[3
]}

Bowers, John E. ^{[3
]}

Herrick, Robert W. ^{[4
]}

Meneghesso, Gaudenzio ^{[1
]}

Zanoni, Enrico ^{[1
]}

Meneghini, Matteo ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[4] Intel Corp, Santa Clara, CA 95054 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2020年 / 26卷 / 02期

关键词：

Quantum dots; laser diodes; degradation; reliability; silicon photonics; semiconductor defects; EMISSION;

D O I：

10.1109/JSTQE.2019.2939519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work investigates the degradation processes affecting the long-term reliability of 13 mu m InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechanisms responsible for the optical degradation. More specifically, the samples (i) exhibited a gradual increase in threshold current, well correlated with (ii) a decrease in sub-threshold emission, and (iii) a decrease in slope efficiency. These variations were found to be compatible with a diffusion process involving the propagation of defects toward the active region of the device and the subsequent decrease in injection efficiency. This hypothesis was also supported by the increase in the defect-related current conduction components exhibited by the electrical characteristics, and highlights the role of defects in the gradual degradation of InAs quantum dot laser diodes. Electroluminescence measurements were used to provide further insight in the degradation process.

引用

页数：8

共 22 条

[1] Structural analysis of life tested 1.3 μm quantum dot [J].