Pyrite (FeS2) thin films prepared by spray method using FeSO4 and (NH4)2Sx

被引:73
|
作者
Yamamoto, A
Nakamura, M
Seki, A
Li, EL
Hashimoto, A
Nakamura, S
机构
[1] Fukui Univ, Fac Engn, Dept Elect & Elect Engn, Fukui 9108507, Japan
[2] Tsuyama Natl Coll Technol, Tsuyama, Okayama 6580824, Japan
关键词
iron pyrite (FeS2); spray method; sulfurization; FeSO4; (NH4)(2)S-x; Hall measurement;
D O I
10.1016/S0927-0248(02)00205-2
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A simple spray method for the preparation of pyrite (FeS2) thin films has been studied using FeSO4 and (NH4)(2)S-x as precursors for Fe and S, respectively. Aqueous solutions of these precursors are sprayed alternately onto a substrate heated up to 120degreesC. Although Fe-S compounds including pyrite are formed on the substrate by the spraying, sulfurization of deposited films is needed to convert other phases such as FeS or marcasite into pyrite. A single-phase pyrite film is obtained after the sulfurization in a H2S atmosphere at around 500degreesC for 30 min. All pyrite films prepared show p-type conduction. They have a carrier concentration (p) in the range 10(16)-10(20) cm(-3) and a Hall mobility (mu(H)) in the range 200-1 cm(2)/ Vs. The best electrical properties (p = 7 x 10(16) cm(-3), mu(H) = 210cm(2)/Vs) for a pyrite film prepared here show the excellence of this method. The use of a lower concentration FeSO4 solution is found to enhance grain growth of pyrite crystals and also to improve electrical properties of pyrite films. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:451 / 456
页数:6
相关论文
共 50 条
  • [21] INVESTIGATIONS ON PYRITE (FeS2) THIN FILMS.
    Gupta, V.P.
    Chandra, K.
    Srivastava, V.K.
    1600, (05):
  • [22] SURFACE PASSIVATION OF IN0.52AL0.48AS USING (NH4)2SX AND P2S5/(NH4)2S
    YOSHIDA, N
    TOTSUKA, M
    INO, J
    MATSUMOTO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A): : 1248 - 1252
  • [23] GaAs MESFET fabrication using (NH4)2Sx solution sulphur diffusion technique
    Lee, JL
    Choi, KJ
    ELECTRONICS LETTERS, 1998, 34 (11) : 1152 - 1153
  • [24] Surface passivation of In0.52Al0.48As using (NH4)2Sx and P2S5/(NH4)2S
    Yoshida, Nobuhide, 1600, JJAP, Minato-ku, Japan (33):
  • [25] (NH4)2Sx preepitaxial treatment for GaAs chemical beam epitaxy regrowth
    Sik, H.
    Driad, R.
    Legay, P.
    Juhel, M.
    Harmand, J.C.
    Launay, P.
    Alexandre, F.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1996, 14 (01):
  • [26] Anodic sulfidation and model characterisation of GaAs (100) in (NH4)2Sx solution
    Elbahnasawy, RF
    McInerney, JG
    Ryan, P
    Hughes, G
    Murtagh, M
    COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 265 - 270
  • [27] SURFACE-STRUCTURE OF INAS (001) TREATED WITH (NH4)2SX SOLUTION
    KATAYAMA, M
    AONO, M
    OIGAWA, H
    NANNICHI, Y
    SUGAHARA, H
    OSHIMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (5A): : L786 - L789
  • [28] ETCHING CHARACTERISTICS OF ALXGA1-XAS IN (NH4)2SX SOLUTIONS
    SEO, JW
    KOKER, T
    AGARWALA, S
    ADESIDA, I
    APPLIED PHYSICS LETTERS, 1992, 60 (09) : 1114 - 1116
  • [29] Pyrite (FeS2) thin films deposited by sol-gel method
    Huang, Liuyi
    Wang, Feng
    Luan, Zhaoju
    Meng, Liang
    MATERIALS LETTERS, 2010, 64 (23) : 2612 - 2615
  • [30] A MODEL TO EXPLAIN THE EFFECTIVE PASSIVATION OF THE GAAS SURFACE BY (NH4)2SX TREATMENT
    NANNICHI, Y
    FAN, JF
    OIGAWA, H
    KOMA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2367 - L2369