Study of moire fringes at the interface of GaN/α-Al2O3(0001)

被引：5

作者：

Chen, ZZ ^{[1
]}

Shen, B

Qin, ZX

Zhu, JM

Zhang, R

Zheng, YD

Zhang, GY

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[3] Peking Univ, Natl Key Lab, Dept Phys & Mesoscop Phys, Beijing 100871, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 324卷 / 1-4期

关键词：

GaN; moire fringes; high-resolution transmission electron micrograph; residual strain;

D O I：

10.1016/S0921-4526(02)01270-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, the interface structure of GaN/alpha-Al2O3 (0 0 0 1) is studied by high-resolution transmission electron microscopy on tilted samples around the <1 1 (2) over bar 0 > (Al2O3) axis. Sets of moire fringes are observed. There are many disparities, such as contrast, period, tilt angle, and so on, among these moire fringes located in different regions. These fringes represent magnifying images of the plane distances of (1 (1) over bar 0 0)(GaN) and the tilts of c-axis of GaN crystallites to that of the substrate. According to these results, the growth mechanism of GaN buffer layer at the interface is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：59 / 62

页数：4

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