Oxidation rates of hydrogen-, chlorine-, alkyl-, and alkoxy-derivitized Si(111) end Si(100) surfaces.

被引：0

作者：

Lewis, NS ^{[1
]}

Haber, JA ^{[1
]}

机构：

[1] CALTECH, Div Chem & Chem Engn, Pasadena, CA 91125 USA

来源：

ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2000年 / 219卷

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

410-COLL

引用

页码：U575 / U575

页数：1

共 5 条

[1] Oxidation kinetics of hydrogen-enriched Si(100) and Si(111) surfaces
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[2] Covalent modification of hydrogen-terminated Si(111), Si(100), and porous silicon surfaces.
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[3] Initial oxidation stages of hydrogen- and styrene-terminated Si(100) surfaces: A molecular dynamics study
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[4] Kinetics of oxidation on hydrogen-terminated Si(100) and (111) surfaces stored in air
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[5] Investigation of light initiated oxidation of hydrogen passivated silicon surfaces:: Hx-Si(100) and H-Si(111) (1X1)
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