Yttrium Fluoride-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells

被引:18
作者
Chen, Zhiming [1 ,2 ]
Lin, Wenjie [1 ,2 ]
Liu, Zongtao [1 ,2 ]
Cai, Lun [3 ]
Chen, Yifeng [4 ]
Ai, Bin [1 ,2 ]
Liang, Zongcun [1 ,2 ,5 ]
Gao, Pingqi [3 ]
Shen, Hui [1 ,2 ,5 ,6 ]
机构
[1] Sun Yat Sen Univ, Inst Solar Energy Syst, Guangdong Prov Key Lab Photovolta Technol, Sch Phys, Guangzhou 510006, Peoples R China
[2] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Peoples R China
[3] Sun Yat Sen Univ, Sch Mat, Guangzhou 510275, Peoples R China
[4] Trina Solar, State Key Lab Photovolta Sci & Technol, Changzhou 213031, Peoples R China
[5] Shunde SYSU Inst Solar Energy, Beijiao 528300, Shunde, Peoples R China
[6] Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 213164, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
yttrium fluoride; carrier-selective interlayer; silicon solar cells; low work function; electron-selective contact; EFFICIENCY; SI; LAYER;
D O I
10.1021/acsaem.0c02646
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The development of dopant-free carrier-selective layer demonstrates the potential to overcome parasitic absorption and doping-related recombination caused by heavy doping to realize both low recombination current density (J(0c)) and low contact resistance (rho(c)) in simplified procedures. In this work, thermally evaporated yttrium fluoride (YF3) films were demonstrated as electron-selective material for c-Si solar cells. The YF3 interlayers have a low work function of 3.1 eV, allowing the lowest rho(c) of 17.8 m Omega.cm(2 )for the n-Si/YF3/Al contacts. N-type Si solar cells based on YF3 for electron-passivated contact were fabricated, reaching an efficiency of 20.8%, an open-circuit voltage of 645 mV, and a fill factor of 80.8%. This indicates the future potential application of dopant-free YF3 electron contact for low-temperature-passivated contact solar cells.
引用
收藏
页码:2158 / 2164
页数:7
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