Effect of sample temperature on the indentation-induced phase transitions in crystalline silicon

被引：19

作者：

Khayyat, M. M. O. ^{[1
]}

Hasko, D. G. ^{[1
]}

Chaudhri, M. M. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 08期

关键词：

D O I：

10.1063/1.2719288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using four-terminal in-situ dc electrical resistance measurements and Raman spectra of residual Vickers indentations in single crystals of Si (100), it has been shown that the sample temperature, in the range of 150 to 300 K, at which a Vickers diamond indentation is made, has a strong influence on the occurrence of indentation-induced phase transitions within the plastically deformed zone around the indentation. A consistent explanation of the experimental results, based on an existing theoretical pressure-temperature phase diagram of silicon, has been provided. (c) 2007 American Institute of Physics.

引用

页数：7

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